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s mhop microelectronics c orp. a STM8458 symbolv ds v gs i dm 62.5 w a p d c 2 1.28 i d units parameter -5.1 -20 c/w vv 20 t a =25 c gate-source voltage drain-source voltage thermal characteristics product summary (n-channel) v dss i d r ds(on) (m ) max 40v 6.3a 42 @ vgs=4.5v 32 @ vgs=10v dual enhancement mode field effect transistor ( n and p chann el ) absolute maximum ratings ( t a =25 c unless otherwise noted ) drain current-continuous a -pulsed b a maximum power dissipation a operating junction and storage temperature range t j , t stg thermal resistance, junction-to-ambient r ja ver 1.0 www.samhop.com.tw jun,12,2008 1 details are subject to change without notice. a product summary (p-channel) v dss i d r ds(on) (m ) max -40v -5.1a 68 @ vgs=-4.5v 48 @ vgs=-10v n-channel p-channel 40 -40 20 6.35.0 a 25 t a =70 c -55 to 150 t a =25 c t a =70 c e as single pulse avalanche energy d 6 mj -4.1 12 s o-8 1 4 3 2 1 d 2 d 2 d 1 d 1 g 2 s 2 g 1 s 1 5 6 7 8
4 symbol min typ max units bv dss 40 v 1 i gss 10 ua v gs(th) 1 v 25 g fs 13.8 s v sd c iss 580 pf c oss 82 pf c rss 50 pf q g 11 nc 10.2 nc q gs 17.3 nc q gd 20 t d(on) 11.3 ns t r 1.2 ns t d(off) 2.9 ns t f ns gate-drain charge v ds =20v,v gs =0v switching characteristics gate-source charge v dd =20v i d =1a v gs =10v r gen =3.3 ohm total gate charge rise time turn-off delay time v ds =20v,i d =6.3a,v gs =10v fall time turn-on delay time m ohm v gs =10v , i d =6.3a v ds =10v , i d =6.3a input capacitance output capacitance dynamic characteristics r ds(on) drain-source on-state resistance forward transconductance diode forward voltage i dss ua gate threshold voltage v ds =v gs , i d =250ua v ds =32v , v gs =0v v gs = 20v , v ds =0v zero gate voltage drain current gate-body leakage current n-channel electrical characteristics ( t a =25 c unless otherwise noted ) off characteristics parameter conditions drain-source breakdown voltage v gs =0v , i d =250ua reverse transfer capacitance on characteristics 3 v gs =4.5v , i d =5.5a 32 32 42 m ohm c f=1.0mhz c v ds =20v,i d =6.3a, v gs =10v drain-source diode characteristics v gs =0v,i s =6.3a 0.79 1.2 v STM8458 www.samhop.com.tw jun,12,2008 2 nc v ds =20v,i d =6.3a,v gs =4.5v 5.8 1.5 b ver 1.0 a i s maximum continuous drain-source diode forward current 6.3 a
4 symbol min typ max units bv dss -40 v -1 i gss 10 ua v gs(th) -1.0 v 38 g fs 10 s v sd c iss 960 pf c oss 142 pf c rss 75 pf q g 15 nc 13 nc q gs 66 nc q gd 25 t d(on) 15.6 ns t r 2.3 ns t d(off) 4.3 ns t f ns gate-drain charge v ds =-20v,v gs =0v switching characteristics gate-source charge v dd =-20v i d =-5.1a v gs =-10v r gen =3.3 ohm total gate charge rise time turn-off delay time v ds =-20v,i d =-5.1a,v gs =-10v fall time turn-on delay time m ohm v gs =-10v , i d =-5.1a v ds =-10v , i d =-5.1a input capacitance output capacitance dynamic characteristics r ds(on) drain-source on-state resistance forward transconductance diode forward voltage i dss ua gate threshold voltage v ds =v gs , i d =-250ua v ds =-32v , v gs =0v v gs = 20v , v ds =0v zero gate voltage drain current gate-body leakage current p-channel electrical characteristics ( t a =25 c unless otherwise noted ) off characteristics parameter conditions drain-source breakdown voltage v gs =0v , i d =-250ua reverse transfer capacitance on characteristics -3.0 v gs =-4.5v , i d =-4.3a 48 52 68 m ohm c f=1.0mhz c v ds =-20v,i d =-5.1a, v gs =-10v drain-source diode characteristics v gs =0v,i s =-5.1a -0.77 -1.2 v notes _ _ STM8458 www.samhop.com.tw jun,12,2008 3 nc v ds =-20v,i d =-5.1a,v gs =-4.5v 7.7 _ -1.8 b ver 1.0 a.surface mounted on fr4 board,t < 10sec. b.pulse test:pulse width < 300us, duty cycle < 2%. c.guaranteed by design, not subject to production testing. d.starting t j =25 c,v dd = 30v,vgs=10v,l=0.5mh. i s maximum continuous drain-source diode forward current -5.1 a
STM8458 www.samhop.com.tw jun,12,2008 4 t j ( c ) i d , drain current(a) v ds , drain-to-source voltage(v) figure 1. output characteristics v gs , gate-to-source voltage(v) figure 2. transfer characteristics i d , drain current(a) r ds(on) (m ) r ds(on) , on-resistance normalized i d , drain current(a) tj, junction temperature( c ) figure 3. on-resistance vs. drain current and gate voltage figure 4. on-resistance variation with drain current and temperature vth, normalized gate-source threshold voltage bvdss, normalized drain-source breakdown voltage tj, junction temperature( c ) figure 5. gate threshold variation with temperature tj, junction temperature( c ) figure 6. breakdown voltage variation with temperature n-channel 20 12 8 4 0 0 0.8 1.6 2.4 3.2 4.0 4.8 16 t j =1 25 c -55 c 2 5 c 60 48 36 24 12 0 8 16 24 32 40 1 v g s =10v v g s =4.5v 72 1.5 1.4 1.3 1.2 1.1 1.0 0.0 0 25 50 75 100 125 v g s =10v i d =6.3a v g s =4.5v i d =5.5a 150 40 32 24 16 80 0 0.5 1 1.5 2 2.5 3 v g s =2.5v v g s =3v v g s =3.5v v g s =4v v g s =4.5v v g s =10v 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 -50 -25 0 25 50 75 100 125 150 v ds =v g s i d =250ua -50 -25 0 25 50 75 100 125 150 0.95 0.90 0.85 i d =250ua 1.00 1.05 1.10 1.15 ver 1.0
STM8458 www.samhop.com.tw jun,12,2008 5 r ds(on) (m ) v gs , gate-to-source voltage(v) figure 7. on-resistance vs. gate-source voltage is, source-drain current(a) v sd , body diode forward voltage(v) figure 8. body diode forward voltage variation with source current c, capacitance(pf) v ds , drain-to-source voltage(v) figure 9. capacitance v gs , gate to source voltage(v) qg, total gate charge(nc) figure 10. gate charge switching time(ns) rg, gate resistance( ) figure 11. switching characteristics 56 42 0 2 4 6 8 10 0 i d =6.3a 28 14 84 70 125 c 25 c 75 c 20.0 10.0 1.0 0 0.4 0.8 1.2 1.6 2.0 0 5 10 15 20 25 30 1200 1000 800 600 400 200 0 c is s c os s c rs s 10 86 4 2 0 0 2 4 6 8 10 12 14 16 v ds =20v i d =6.3a 100 10 1 1 6 10 60 100 60 600 300 200 v ds =20v ,id=6.3a v g s =10v t d(on) t r t d(off) t f ver 1.0 i d , drain current(a) v ds , drain-source voltage(v) figure 12. maximum safe operating area 0.1 1 10 100 v g s =10v s ingle p uls e t c=25 c dc 1m s 10ms 0.1 0.05 1 10 r ds (o n) l i m i t 10 0u s 1 0us 125 c 0.1 75 c 25 c
t p v ( br )d ss i a s r g i a s 0.0 1 t p d .u .t l v d s + - v d d d r ive r a 15v 20v f igure 13a. f igure 13b. u ncl am p e d s in d u ct i ve t e t ci r c u i t o f r m w ave s u ncl am p e d in d u ct i ve STM8458 ver 1.0 www.samhop.com.tw jun,12,2008 6 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 1 0 100 1000 square wave pulse duration(sec) normalized thermal transient impedance curve normalized transient thermal resistance p dm t 1 t 2 1. r / j a (t)=r (t) * r / j a 2. r / j a =s ee datas heet 3. t j m- t a = p dm * r / j a (t) 4. duty c ycle, d=t 1 /t 2 single pulse 0.5 0.2 0.1 0.05 0.02 0.01
STM8458 www.samhop.com.tw jun,12,2008 7 t j ( c ) i d , drain current(a) v ds , drain-to-source voltage(v) figure 1. output characteristics v gs , gate-to-source voltage(v) figure 2. transfer characteristics i d , drain current(a) r ds(on) (m ) r ds(on) , on-resistance normalized i d , drain current(a) tj, junction temperature( c ) figure 3. on-resistance vs. drain current and gate voltage figure 4. on-resistance variation with drain current and temperature vth, normalized gate-source threshold voltage bvdss, normalized drain-source breakdown voltage tj, junction temperature( c ) figure 5. gate threshold variation with temperature tj, junction temperature( c ) figure 6. breakdown voltage variation with temperature p-channel ver 1.0 120 100 80 60 40 20 1 3 6 9 12 15 1 v g s =-10v v g s =-4.5v 1.5 1.4 1.3 1.2 1.1 1.0 0 25 125 100 50 75 v g s =-4.5v i d =-4.3a 150 v g s =-10v i d =-5.1a 0 30 24 18 12 6 0 0 0.5 1 1.5 2 2.5 3 v g s =-4.5v v g s =-6v v g s =-8v v g s =-10v 15 12 9 6 0 0 0.8 1.6 2.4 3.2 4.0 4.8 3 t j=125 c -55 c 25 c 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25 0 25 50 75 100 125 150 v ds =v g s i d =-250ua -50 -25 0 25 50 75 100 125 150 1.15 1.10 1.05 1.00 0.95 0.90 0.85 i d =-250ua
STM8458 www.samhop.com.tw jun,12,2008 8 r ds(on) (m ) v gs , gate-to-source voltage(v) figure 7. on-resistance vs. gate-source voltage is, source-drain current(a) v sd , body diode forward voltage(v) figure 8. body diode forward voltage variation with source current c, capacitance(pf) v ds , drain-to-source voltage(v) figure 9. capacitance v gs , gate to source voltage(v) qg, total gate charge(nc) figure 10. gate charge switching time(ns) rg, gate resistance( ) figure 11. switching characteristics ver 1.0 i d , drain current(a) v ds , drain-source voltage(v) figure 12. maximum safe operating area 0.1 1 10 100 dc 100ms 0.1 0.03 1 10 r ds (o n ) l im i t 1 00us 1 0us 20.0 10.0 1.0 0 0.2 0.4 0.6 0.8 1.0 25 c 75 c 125 c 5.0 1.2 120 100 80 60 40 20 0 2 4 6 8 10 0 25 c 125 c 75 c i d =-5.1a 10 86 4 2 0 0 2 4 6 8 10 12 14 16 v ds =-20v i d =-5.1a 0 5 10 15 20 25 30 1500 1250 1000 750 500 250 0 c rs s c is s c os s 100 10 1 1 6 10 60 100 60 600 300 600 t r t f t d ( o n ) t d ( o f f ) v ds =-20v ,id=-5.1a v g s =-10v v g s =10v s ingle p uls e t c=25 c 1ms
t p v ( br )d ss i a s r g i a s 0.0 1 t p d .u .t l v d s + - v d d d r ive r a 15v 20v f igure 13a. f igure 13b. u ncl am p e d s in d u ct i ve t e t ci r c u i t o f r m w ave s u ncl am p e d in d u ct i ve STM8458 ver 1.0 www.samhop.com.tw jun,12,2008 9 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 1 0 100 1000 square wave pulse duration(sec) normalized thermal transient impedance curve single pulse p dm t 1 t 2 1. r thja (t)=r (t) * r ja 2. r ja =see datasheet 3. t jm- t a = p dm * r ja (t) 4. duty cycle, d=t 1 /t 2 th th th 0.01 0.02 0.5 0.2 0.1 0.05 normalized transient thermal resistance
STM8458 www.samhop.com.tw jun,12,2008 10 package outline dimensions so-8 s y mb ols min min 0.053 0.004 0.189 0.150 0.228 0.016 0 1.35 0.10 4.80 3.81 5.79 0.41 0 max max 0.069 0.010 0.196 0.157 0.244 0.050 8 1.75 0.25 4.98 3.99 6.20 1.27 8 millime t e r s inc he s a a1 d eh l 1 e b h e l a1 a c d 0.05 typ. 0.016 typ. 0.008 typ. 0.015x45 ver 1.0
STM8458 www.samhop.com.tw jun,12,2008 11 ver 1.0 so-8 tape and reel data so-8 carrier tape so-8 reel unit: @ package sop 8n 150 ? a0 b0 k0 d0 d1 e e1 e2 p0 p1 p2 t 6.50 5.25 2.10 ? 1.5 (min) ? 1.55 12.0+0.3 - 0.1 1.75 5.5 2 0.10 8.0 2 0.10 4.0 2 0.10 2.0 2 0.10 0.30 2 0.013 unit: @ tape size 12 @ reel size ? 330 m n w w1 h k s g r v 330 2 1 62 2 1.5 12.4 + 0.2 16.8 - 0.4 ? 12.75 + 0.15 2.0 2 0.15 a a e e1 e2 p0 d0 a0 b0 d1 p1 p2 feeding direction t k0 section a-a 2 0.15 2 0.10 2 0.10 2 0.10 2 0.10 terminal number 1 w1 m n w g v r s k h

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